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The DMP68D1LVQ-13 is a dual P-channel enhancement mode MOSFET from Diodes Incorporated, packaged in SOT563. It features a drain-source voltage of -60V and a continuous drain current of -238mA at +25°C. The maximum on-resistance is 8Ω at VGS = -5V. Operating temperature ranges from -55°C to +150°C with a power dissipation of 0.5W. The device is AEC-Q101 qualified for automotive applications.
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified by Diodes Incorporated. Confirm that the component meets RoHS 3 compliance and halogen-free requirements as defined in the manufacturer's documentation before finalizing procurement specifications.
Select this component when a dual P-channel solution is required in an SOT563 footprint. Ensure the application operates within the -60V drain-source voltage limit and respects the -238mA continuous current rating at +25°C. Verify thermal management capabilities given the 258°C/W junction-to-ambient resistance on standard FR-4 substrates.
This part belongs to the DMP68D1LVQ series manufactured by Diodes Incorporated. It is designed specifically to meet stringent automotive industry standards, including IATF 16949 manufacturing certification. The series provides a robust alternative for space-constrained power switching applications requiring high reliability.
Consult the official datasheet for direct pin-compatible alternatives within the same family. Verify electrical parameters such as RDS(ON) and BVDSS match the original requirements when considering cross-manufacturer substitutes.
Yes, it is AEC-Q101 qualified, supported by PPAP, and manufactured in IATF 16949 certified facilities.
The maximum operating junction temperature is +150°C.
Yes, the datasheet lists ESD protection as a key feature of the device.