DMPH3010LK3Q-13

$0.37

Description：MOSFET P-CHANNEL 30V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2384f0af017f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CHANNEL 30V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：139 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6807 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.9W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMPH3010LK3Q-13

Overview

The DMPH3010LK3Q-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -50A at +25°C case temperature. The device exhibits a low on-state resistance of 7.5mΩ at VGS=-10V and 10mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-252 surface-mount package.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Qualified to AEC-Q101 standards for automotive reliability
100% unclamped inductive switching (UIS) tested in production
Lead-free finish with RoHS compliance

Applications

DC-DC converters
Power management functions
Backlighting circuits

Procurement Notes

Verify the specific suffix 'Q' against official documentation to confirm AEC-Q101 qualification status, as datasheets may list standard variants without this designation. Confirm that the TO-252 package dimensions match your PCB footprint requirements. Ensure thermal design accounts for the specified junction-to-case resistance values under your expected operating conditions.

Selection Notes

Select this component when high efficiency power management requires low on-resistance combined with robust switching performance. The extended +175°C rating makes it appropriate for applications exposed to elevated temperatures. Verify that the gate drive voltage levels align with the specified thresholds for optimal RDS(ON) performance.

Part Context

This part belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching speeds. The TO-252 package provides a balance between thermal dissipation capabilities and compact surface-mount integration for various electronic designs.