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Product Detailed Parameters
- Description：MOSFET P-CH 40V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.7A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1918 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 60W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMPH4025SFVWQ-7 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 40 A. Its on-resistance is specified at 25 mOhms with a gate-source threshold voltage of 1.8 V. The component operates within a temperature range of -55°C to +175°C, dissipating up to 60 W of power. It meets AEC-Q101 automotive qualification standards.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
- High thermal efficiency enabled by the PowerDI3333-8 package design, supporting significant power dissipation capabilities.
Applications
- Automotive electronic systems requiring qualified semiconductor components
- Power management circuits utilizing P-channel switching
- Industrial applications operating within extended temperature ranges
Procurement Notes
Verify the specific suffix 'SFVWQ' against official manufacturer documentation to confirm automotive qualification status and exact pinout configuration. Ensure that the PowerDI3333-8 footprint matches the target PCB layout requirements precisely. Cross-reference the datasheet for any updates regarding lead-free compliance or material declarations prior to final procurement decisions.
Selection Notes
Select this component when an automotive-qualified P-channel MOSFET with high current handling is required. The 40 A rating distinguishes it from lower-current variants in the same series. Consider the 25 mOhm on-resistance for efficiency calculations in low-voltage applications. Verify that the 40 V drain-source voltage aligns with the system's maximum operating voltage constraints.
Part Context
This part belongs to the DMPH series of P-channel MOSFETs from Diodes Incorporated. It shares the PowerDI3333-8 form factor with other devices in the lineup but offers distinct electrical characteristics tailored for higher current applications. The automotive qualification differentiates it from standard commercial grade counterparts.
Replacement Considerations
Direct substitutes include DMPH4025SFG-7 and DMPH4025SFGQ-7, which share identical electrical specifications and packaging. Verify that the replacement variant maintains the required AEC-Q101 certification if automotive compliance is mandatory for the application.
