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The DMPH6050SSDQ-13 is a dual P-channel enhancement mode MOSFET designed for automotive applications. It features a -60V drain-source voltage and supports continuous drain currents of -5.2A at +25°C. The device offers low on-resistance, rated at a maximum of 48mΩ at VGS=-10V and 60mΩ at VGS=-4.5V. Packaged in an SO-8 surface-mount case, it operates within a temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards.
Verify the specific ordering suffix 'Q' against official Diodes Incorporated documentation to confirm tape and reel packaging specifications. Ensure that the component meets the required AEC-Q101 qualification levels and PPAP requirements for your specific automotive application context before finalizing procurement.
Select this component when designing circuits requiring dual P-channel MOSFETs with high thermal tolerance and automotive reliability standards. Consider the SO-8 package dimensions and thermal resistance characteristics relative to your board layout and heat dissipation capabilities to ensure optimal performance under steady-state and pulsed conditions.
This part belongs to the DMPH series of dual P-channel MOSFETs manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive industry requirements, offering enhanced reliability through AEC-Q101 qualification and PPAP support for high-volume manufacturing environments.
Consult official manufacturer substitution lists or datasheets for verified equivalent parts. Do not assume cross-compatibility based solely on electrical parameters without verifying pin configurations and package dimensions.
The maximum operating junction temperature is +175°C.
Yes, it is qualified to AEC-Q101 standards and is PPAP capable.
The maximum gate-source voltage is ±20V.