DMS2120LFWB-7

$0.14

Description：MOSFET P-CH 20V 2.9A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d726bcb7aa8e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 2.9A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：95mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：632 pF @ 10 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN3020B (3x2)
Package / Case：8-VDFN Exposed Pad

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DMS2120LFWB-7

Overview

The DMS2120LFWB-7 is a P-channel enhancement mode MOSFET with an integrated Super Barrier Rectifier (SBR) in a U-DFN3020-8 Type B package. It features a drain-source voltage of -20V and a continuous drain current of -2.9A. The device offers low on-resistance, rated at 95mΩ at VGS = -4.5V and 120mΩ at VGS = -2.5V. The integrated SBR diode supports an average rectified output current of 1A with a peak repetitive reverse voltage of 20V. Operating temperatures range from -55°C to +150°C.

Feature Summary

Integrates a P-channel MOSFET with a low forward voltage Super Barrier Rectifier for efficient synchronous rectification.
Provides low on-resistance across various gate drive voltages to minimize conduction losses.
Features a low profile case height of 0.5mm maximum within a compact U-DFN3020-8 Type B package.
Qualified to AEC-Q101 standards for high reliability in automotive applications.

Applications

Automotive power management systems
Low voltage DC-DC converter circuits
Synchronous rectification in power supplies

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets RoHS compliance and is halogen-free as specified in the manufacturer's documentation. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a combined P-channel switch and body or external diode replacement is required in space-constrained designs. The low gate threshold voltage facilitates driving from standard logic levels. Evaluate thermal performance based on the 85°C/W junction-to-ambient resistance and ensure adequate PCB copper area for heat dissipation.

Part Context

This part belongs to Diodes Incorporated's portfolio of integrated power devices combining MOSFETs with Schottky-like rectifiers. The SBR technology replaces traditional PN junction diodes to reduce forward voltage drop and switching losses. The U-DFN3020-8 package provides a small footprint suitable for dense surface-mount layouts.

Replacement Considerations

Check pinout compatibility and electrical ratings against existing designs. Verify that substitute components support the same U-DFN3020-8 Type B mechanical dimensions and soldering profiles.