DMS3017SSD-13

Overview

The DMS3017SSD-13 is an asymmetric dual N-channel enhancement mode MOSFET in an SO-8 package. It integrates a Schottky diode on one die to minimize conduction and switching losses. Q1 features a typical RDS(on) of 8.5 mΩ at VGS=10V and 9.5 mΩ at VGS=4.5V, with a continuous drain current of 8.0A at 25°C. Q2 has a typical RDS(on) of 15 mΩ at VGS=10V and 25 mΩ at VGS=4.5V, with a continuous drain current of 6.0A at 25°C. Both channels support a VDSS of 30V and operate within a temperature range of -55°C to +150°C.

Feature Summary

• Monolithic integration of a MOSFET and Schottky diode on a single die reduces body diode switching losses.
• Asymmetric design provides optimized performance for distinct circuit roles within a single component.
• Low gate capacitance ratio minimizes the risk of shoot-through or cross-conduction currents at high frequencies.
• Qualified to AEC-Q101 standards for high reliability applications.

Applications

• High-frequency power conversion circuits
• Automotive electronics requiring AEC-Q101 compliance
• Synchronous rectification applications

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration required for your assembly line. Confirm that the SO-8 case dimensions align with your PCB footprint specifications. Ensure the component meets RoHS and halogen-free requirements if mandated by your project standards. Check for any end-of-life notices as the datasheet indicates it may not be recommended for new designs.

Selection Notes

Select this component when an asymmetric dual MOSFET solution is needed to save board space and simplify driver requirements. The integrated Schottky diode on Q1 offers lower forward voltage compared to standard body diodes, improving efficiency in synchronous rectification. Consider the thermal resistance values based on your specific PCB copper coverage and airflow conditions to ensure adequate heat dissipation.

Part Context

This device belongs to Diodes Incorporated's DIOFET family, which utilizes a patented process to integrate discrete components. The DMS3017SSD-13 specifically targets applications requiring compact, high-reliability power switching solutions. It is designed to replace multiple discrete components, reducing system complexity and potential failure points in power management designs.

Replacement Considerations

The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and 'NO ALTERNATE PRODUCT'. No public substitute part numbers are confirmed for direct replacement. Designers should evaluate newer asymmetric MOSFET families from the manufacturer or other suppliers if this component is no longer suitable for new projects.

FAQ

What is the difference between Q1 and Q2 in the DMS3017SSD?

Q1 is the primary channel with lower on-resistance (8.5 mΩ typ) and higher current capability (8.0A), while Q2 is the secondary channel with higher on-resistance (15 mΩ typ) and lower current capability (6.0A). Q1 also includes an integrated Schottky diode.

Is the DMS3017SSD qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards, making it suitable for high-reliability automotive electronics applications.

How does the integrated Schottky diode affect performance?

The integrated Schottky diode on Q1 reduces the forward voltage drop and reverse recovery charge (Qrr) compared to a standard body diode, thereby minimizing switching losses during operation.