DMT10H015SK3-13

$0.34

Description：MOSFET N-CH 100V 54A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fddb7697964a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 54A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2343 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta), 4.2W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT10H015SK3-13

Overview

The DMT10H015SK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 54A at case temperature +25°C. The device exhibits a maximum on-resistance of 14mΩ at VGS=10V and 20A, or 20mΩ at VGS=6V and 20A. Total power dissipation is rated at 1.8W in ambient conditions and 2.9W with an exposed copper pad. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-252 (DPAK) package.

Feature Summary

Features low on-resistance to minimize conduction power losses.
Designed with low gate charge characteristics to reduce switching energy losses.
Manufactured using lead-free finish materials that are RoHS compliant.
Constructed as a halogen and antimony free "Green" device.

Applications

Power management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. Confirm compliance requirements such as RoHS directives and Halogen-free status against project specifications. Ensure thermal design accounts for the specified junction-to-ambient resistance values under intended mounting conditions. Validate that the TO-252 footprint aligns with the manufacturer's suggested pad layout guidelines.

Selection Notes

Select this component when high efficiency is required in power management applications due to its low on-resistance and fast switching capabilities. Consider the 100V breakdown voltage and 54A current rating for appropriate load handling. Evaluate thermal performance based on the specific PCB copper area available for heat dissipation through the exposed drain pad.

Part Context

This part belongs to the DMT10 series of advanced N-channel MOSFETs from Diodes Incorporated. The series focuses on providing robust performance for high-efficiency power conversion systems. The specific model utilizes a TO-252 case style designed for surface mount technology integration into printed circuit boards.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent parts. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions. Verify electrical parameters against the original datasheet specifications before substitution.