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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 54.7A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：54.7A (Tc)
- Rds On (Max) @ Id, Vgs：17.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1986pF @ 50V
- Power - Max：2.2W (Ta), 78W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMT10H017LPD-13 is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 100V and a maximum continuous drain current of 54.7A at TC = +25°C. The on-resistance is 17.4mΩ at VGS = 10V and 30.3mΩ at VGS = 4.5V. Total power dissipation reaches 78W at TC = +25°C, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Features 100% unclamped inductive switching capability for robust end applications.
- Designed for high-conversion efficiency with low input capacitance and fast switching speeds.
Applications
- Synchronous rectifiers
- DC-DC converters
- Primary side switching
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and halogen-free requirements as defined by Diodes Incorporated. Ensure the intended application environment aligns with the specified thermal resistance and junction temperature limits provided in the datasheet.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact PowerDI5060-8 footprint. Evaluate the 17.4mΩ on-resistance against system conduction loss targets at standard gate drive voltages. Consider the 54.7A continuous current rating relative to the expected thermal management capabilities of the target PCB layout.
Part Context
This device belongs to the DMT10 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic PowerDI package rated UL 94V-0. The component is designed for surface mount assembly and offers a lead-free finish with matte tin annealed terminals over a copper leadframe.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in the PowerDI5060-8 package with comparable 100V ratings and similar on-resistance values. Verify pinout compatibility and thermal characteristics before implementation.
FAQ
What is the maximum avalanche energy rating?
The maximum avalanche energy (EAS) is 150 mJ with an inductance of 3mH and 50 mJ with an inductance of 1mH.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises, as illustrated in the typical on-resistance versus temperature graphs in the datasheet.
