DMT10H025SK3-13

$0.77

Description：MOSFET N-CH 100V 41.2A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9ff1f664bf6d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 41.2A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：41.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1544 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT10H025SK3-13

Overview

The DMT10H025SK3-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 100V and a continuous drain current of 41.2A at 25°C case temperature. The device offers a low on-resistance of 23mΩ at VGS=10V and 30mΩ at VGS=6V, with a gate threshold voltage ranging from 2V to 4V. Total gate charge is 21.4nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Features 100% unclamped inductive switching capability for robust end applications.
Low RDS(ON) minimizes conduction power losses.
Low QG minimizes switching losses during operation.
Qualified to AEC-Q101 standards for high reliability.

Applications

Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free as specified in the manufacturer's documentation. Ensure compatibility with the TO-252 (DPAK) footprint requirements for your printed circuit board design.

Selection Notes

Select this component when a 100V rating and high current handling up to 41.2A are required in a surface-mount DPAK package. Consider the thermal resistance characteristics and the need for adequate heatsinking or copper area on the PCB to manage power dissipation effectively under continuous load conditions.

Part Context

This part belongs to the DMT10H series of advanced N-channel MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is housed in a molded plastic green casing with matte tin annealed terminals over a copper leadframe. The product is classified as an advanced information component suitable for general-purpose switching applications.

Replacement Considerations

Consult official datasheets for cross-referencing. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON) before substituting with other TO-252 packages.