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Product Detailed Parameters
- Description：MOSFET N-CH 100V 7.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1544 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT10H025SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source breakdown voltage and an SO-8 surface-mount package. The device provides a maximum on-resistance of 23mΩ at VGS=10V and 30mΩ at VGS=6V, supporting continuous drain currents of 7.4A at +25°C and 5.9A at +70°C. Total gate charge is 21.4nC at VGS=10V. Thermal characteristics include a junction-to-ambient resistance of 91°C/W on FR-4 substrate.
Feature Summary
- High conversion efficiency with minimized on-state resistance for reduced power loss
- Fast switching speed and low input capacitance suitable for high-frequency applications
- 100% unclamped inductive switching capability ensuring robust end-application reliability
Applications
- High frequency switching circuits
- Synchronous rectification systems
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' to confirm tape and reel packaging quantities. Ensure the component meets RoHS compliance requirements if restricted substances are mandated. Confirm that the SO-8 package dimensions align with the target PCB footprint layout before finalizing procurement orders.
Selection Notes
Select this component when a 100V rating is required alongside low conduction losses in compact surface-mount designs. Evaluate thermal management needs based on the specified junction-to-ambient resistance values under different copper pad configurations. Consider the gate threshold voltage range for compatibility with standard logic-level drive signals.
Part Context
This part belongs to the DMT10H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices utilize silicon technology optimized for high-efficiency power management. The product line emphasizes low on-resistance while maintaining superior switching performance across various industrial and consumer electronics applications.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching critical electrical parameters such as breakdown voltage, on-resistance, and package type to ensure functional equivalence without compromising circuit safety or performance.
FAQ
What is the maximum continuous drain current at elevated temperatures?
The maximum continuous drain current decreases to 5.9A when the ambient temperature reaches +70°C.
Is the device qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.
