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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMT10H9M9LPSW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) ranging from 61V to 100V and is housed in a PowerDI5060-8/SWP surface-mount package. The component is supplied in tape and reel packaging with a quantity of 2,500 units per reel. This single-channel device is designed for high-efficiency switching applications requiring robust performance within the specified voltage range.
Feature Summary
- N-channel enhancement mode operation
- Drain-source breakdown voltage between 61V and 100V
- PowerDI5060-8/SWP surface-mount package
Applications
- DC-DC converter circuits
- Load switch applications
- Power management modules
Procurement Notes
Verify the specific BVDSS value within the 61V to 100V range against the official datasheet before integration. Confirm that the PowerDI5060-8/SWP package dimensions match the PCB footprint requirements. Ensure the supplier provides genuine Diodes Incorporated products to guarantee electrical parameter compliance and reliability standards.
Selection Notes
Select this component when a compact N-channel MOSFET with a maximum drain-source voltage of 100V is required. The PowerDI5060-8/SWP package offers a balance of thermal performance and space efficiency. Consider the specific on-resistance and gate charge values from the detailed datasheet to ensure compatibility with the driving circuitry and thermal constraints of the target application.
Part Context
This part belongs to the DMT10H series of N-channel MOSFETs from Diodes Incorporated. The series utilizes silicon technology and is optimized for general-purpose switching applications. The PowerDI family provides lead-free, halogen-free packages suitable for automated assembly processes in consumer and industrial electronics manufacturing.
Replacement Considerations
Consult the official Diodes Incorporated cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or nominal voltage ratings without verifying electrical parameters.
