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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V TO251 TUB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2085 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The DMT10H9M9SH3 is a 100V N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100V and a low on-state resistance (RDS(ON)) of 9mΩ at VGS=10V, supporting an 84A continuous drain current. The device utilizes a TO251 (Type TH3) package with matte tin annealed terminals over a copper leadframe. Key electrical parameters include a gate threshold voltage range of 2V to 4V, total gate charge of 30nC, and a thermal resistance junction-to-case of 1.1°C/W.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Features low input capacitance and low on-resistance characteristics.
Applications
- Motor Control
- Backlighting
Procurement Notes
Verify the specific ordering suffix 'H3' against official manufacturer documentation to confirm compliance with RoHS directives and halogen-free status. Confirm that the component is supplied in tubes containing 75 pieces per tube as specified in the ordering information section of the datasheet.
Selection Notes
Select this component for designs requiring a 100V rating with high current handling capabilities up to 84A. Ensure the application supports the TO251 surface-mount form factor and accounts for the thermal requirements associated with the specified junction-to-case resistance values under varying duty cycles.
Part Context
This part belongs to the DMT series of N-Channel Enhancement Mode MOSFETs from Diodes Incorporated. It is categorized under general-purpose transistors designed for power switching applications. The product represents advanced information released in July 2021, indicating it is a newer generation component within the manufacturer's portfolio.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' TO251 packages without verifying pinout and electrical parameter alignment.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is 336A, measured with a 10µs pulse duration and a 1% duty cycle.
Is this component suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 manufacturing, customers must contact Diodes Incorporated or their local representative directly.
