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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V POWERDI5
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The DMT12H7M9SPSW-13 is a silicon N-channel MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP surface-mount package and is supplied in tape-and-reel format with a factory quantity of 2,500 units. The device operates within a drain-source voltage range of 101V to 250V. It is classified under the Transistors sub-category and features single-channel enhancement mode operation.
Feature Summary
- Utilizes PowerDI5060-8/SWP surface-mount packaging for compact board integration
- Designed for high-voltage applications within the 101V to 250V drain-source range
- Constructed using silicon technology for standard switching performance
Applications
- High-voltage power switching circuits
- DC-DC converter output stages
- General-purpose transistor applications requiring elevated breakdown voltage
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm the specific suffix matches the required PowerDI5060-8/SWP package variant. Ensure the reel quantity aligns with production requirements. Cross-reference the manufacturer part number against official datasheets to validate technical specifications before procurement.
Selection Notes
Select this component when circuit designs require an N-channel MOSFET capable of handling drain-source voltages between 101V and 250V. The PowerDI5060-8/SWP package offers a balance of thermal performance and footprint efficiency. Verify that the silicon technology and single-channel configuration meet the specific switching and load requirements of the target application.
Part Context
This part belongs to the Diodes Incorporated MOSFET product line, specifically categorized under Transistors. It shares the PowerDI5060-8/SWP form factor with other devices in the series, such as the DMTH4M75SPSW-13 and DMT10H009LPSW-13, though electrical ratings vary significantly across the family based on the specific model designation.
