DMT15H053SK3-13

$1.12

Description：MOSFET BVDSS: 101V~250V TO252 T&
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:ba0a5d492f75 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 101V~250V TO252 T&
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：60mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：814 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT15H053SK3-13

Overview

The DMT15H053SK3-13 is a 150V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 150V and a continuous drain current (ID) of 21A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 60mΩ maximum at VGS = 10V and ID = 20A. Total gate charge (Qg) is typically 11.5nC at VDS = 75V, ID = 4.1A, and VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO252 (DPAK) package.

Feature Summary

Features 100% unclamped inductive switching testing for enhanced reliability and robustness in end applications.
Designed with low RDS(ON) characteristics to minimize conduction power losses during operation.
Incorporates low total gate charge (Qg) specifications to reduce switching energy losses.
Manufactured using lead-free finish materials that are compliant with RoHS directives.

Applications

Power management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, specifically RoHS compliance and Halogen/Antimony-free 'Green' device definitions provided by Diodes Incorporated. Ensure the selected package variant matches the thermal requirements of the target application design.

Selection Notes

Select this component when a 150V breakdown voltage and 21A continuous current capability are required for high-efficiency power management circuits. The TO252 package provides adequate thermal dissipation for moderate power levels. Evaluate the 60mΩ RDS(ON) against system efficiency targets and ensure the gate drive voltage supports the specified 10V test condition for optimal performance.

Part Context

This part belongs to the DMT15H053SK3 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications requiring medium voltage ratings. The product line emphasizes low on-resistance and fast switching speeds to improve overall system efficiency in power conversion topologies.