DMT15H053SSS-13

$0.32

Description：MOSFET N-CH 150V 5.2A/15A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8010dfa4cba6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 150V 5.2A/15A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：5.2A (Ta), 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：53mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：814 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT15H053SSS-13

Overview

The DMT15H053SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of 150 V and a maximum continuous drain current (ID) of 5.2 A at 25°C, increasing to 15 A at case temperature of 25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 53 mΩ maximum at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.

Feature Summary

Designed for high conversion efficiency with minimized on-state resistance to reduce conduction losses.
Features low input capacitance and fast switching speed suitable for high-frequency applications.
Verified reliability through 100% unclamped inductive switching (UIS) testing during production.

Applications

High frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free as specified in the manufacturer's documentation. Ensure the procurement channel is authorized to guarantee product authenticity and adherence to quality definitions provided by Diodes Incorporated.

Selection Notes

Select this component when a 150V rating and low RDS(ON) are required for power management tasks. The SO-8 package provides a compact footprint for surface mount assembly. Consider the thermal characteristics and safe operating area limits when designing for continuous or pulsed current loads to ensure reliable operation under expected junction temperatures.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to balance low on-state resistance with superior switching performance. The device is intended for general-purpose power management applications where high efficiency and robust switching capabilities are necessary.