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Product Detailed Parameters
- Description：MOSFET N-CH 24V 70A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：24 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53.7 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT2004UFG-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (BVDSS) of 24V and a maximum continuous drain current (ID) of 70A at +25°C case temperature. The device offers low on-state resistance, specified as 5.0mΩ max at VGS=10V and 6.5mΩ max at VGS=4.5V. Key electrical parameters include a gate-source voltage rating of ±12V, total gate charge of 53.7nC at VGS=10V, and a junction-to-case thermal resistance of 3.5°C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management with minimized on-state losses
- Small form factor thermally efficient package enabling higher density end products
- Occupies significantly less board area compared to traditional SO-8 packages
- Manufactured using totally lead-free and fully RoHS compliant processes
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications. Ensure the selected variant matches the intended thermal and electrical requirements for the target application before finalizing procurement.
Selection Notes
Select this component based on its 24V rating and low RDS(ON) characteristics suitable for compact designs. Evaluate the thermal performance within the PowerDI3333-8 package constraints. Consider the gate threshold voltage and drive requirements to ensure compatibility with control logic. Verify that the package dimensions fit the available PCB space relative to larger alternatives.
Part Context
This part belongs to the DMT series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI proprietary surface-mount technology designed to reduce footprint while maintaining robust thermal dissipation capabilities. The series targets applications requiring high current handling in minimal physical space.
Replacement Considerations
Consult official manufacturer substitution lists or cross-reference tools for verified equivalent parts. Do not assume pinout or electrical compatibility with other MOSFETs without verifying datasheet specifications.
