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The DMT2005UDV is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a 24V drain-source voltage rating and low on-resistance of 7mΩ at VGS=10V, scaling to 12mΩ at VGS=2.5V. Continuous drain current reaches 50A at 25°C case temperature. The device includes integrated gate protection diodes for each channel.
Verify the specific ordering suffix (e.g., -7 or -13) against the required tape and reel quantity. Confirm the package type matches the PowerDI3333-8 specification. Ensure compliance with halogen-free requirements if specified by the design. Check the date code marking format for traceability needs.
Select this component for applications requiring compact dual-channel switching with low drive voltage capability. The 2.5V gate threshold suitability supports logic-level control. Evaluate thermal resistance values based on the specific PCB copper area and mounting conditions used in the target design.
This part belongs to Diodes Incorporated's PowerDI series, designed for space-constrained surface-mount applications. The PowerDI3333-8 package provides an exposed drain pad for improved thermal dissipation compared to standard small outline packages.
No public confirmed substitute part numbers are documented in the source material.
The maximum continuous drain current is 50A at a case temperature of +25°C.
Yes, the equivalent circuit diagram indicates integrated gate protection diodes for both channels.
The junction and storage temperature range is -55°C to +150°C.