DMT3009LEV-7

$0.17

Description：MOSFET 25V-30V POWERDI3333-8
Series：-

SKU:99c6c667f1d0 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 25V-30V POWERDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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DMT3009LEV-7

Overview

The DMT3009LEV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type UXD) surface-mount package. The device provides a drain-source voltage rating of 30V and supports continuous drain currents up to 20A at TC = +25°C. Static drain-source on-resistance is specified as 12mΩ max at VGS = 10V, 20mΩ max at VGS = 4.5V, and 25mΩ max at VGS = 3.8V. Total gate charge is 12nC at VGS = 10V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Dual N-channel configuration within a compact PowerDI3333-8 package
Optimized for low on-state resistance while maintaining fast switching performance
Low gate threshold voltage suitable for general-purpose interfacing
Totally lead-free and fully RoHS compliant with halogen and antimony-free green materials

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and moisture sensitivity levels before integration into production designs.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in a small footprint. Evaluate thermal dissipation requirements based on the junction-to-ambient resistance values provided in the datasheet. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the DMT3009 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for high-efficiency power management applications where minimizing on-state resistance is critical without compromising switching speed.