DMT3020LFVW-7

$0.15

Description：MOSFET N-CH 30V 38A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8e1886583d26 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 38A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：393 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT3020LFVW-7

Overview

The DMT3020LFVW-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) package. It features a drain-source voltage of 30V and a continuous drain current of 38A at +25°C case temperature. The device offers a maximum on-resistance of 17mΩ at VGS=10V and 28mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.0V to 2.5V, total gate charge of 7.0nC at VGS=10V, and a junction-to-case thermal resistance of 4.0°C/W.

Feature Summary

Low RDS(ON) minimizes conduction losses for high efficiency power management.
PowerDI3333-8 (SWP) package provides a small form factor with wettable flanks for improved optical inspection.
Totally lead-free, fully RoHS compliant, and halogen/antimony free construction.

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration. Confirm that the PowerDI3333-8 (SWP) package type matches the required board layout and thermal dissipation needs. Ensure compliance with RoHS and halogen-free requirements aligns with project specifications before finalizing procurement.

Selection Notes

Select this component for applications requiring low on-state resistance and compact footprint. The SWP package enables higher density designs compared to traditional SO-8 packages. Consider the thermal resistance characteristics when designing heat dissipation strategies for continuous operation scenarios.

Part Context

This part belongs to the DMT3020 series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is intended for surface mount assembly. The product line focuses on balancing low static resistance with superior switching performance for modern electronic systems.