DMT3020LSD-13

Overview

The DMT3020LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a low on-resistance of 20mΩ at VGS=10V, supporting a continuous drain current of 16A at TC=+25°C. The device utilizes an SO-8 surface-mount package with a junction-to-case thermal resistance of 20°C/W. Electrical characteristics include a gate threshold voltage ranging from 1.0V to 2.5V and a total gate charge of 7.0nC at VGS=10V.

Feature Summary

• Dual N-channel configuration designed for high efficiency power management applications
• Low on-state resistance combined with fast switching speed capabilities
• 100% unclamped inductive switching (UIS) tested in production for robustness
• Totally lead-free and fully RoHS compliant construction

Applications

• Backlighting circuits
• Power management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging format. Confirm that the component meets the required environmental standards, specifically the halogen-free and antimony-free 'Green' device specifications outlined in the manufacturer's documentation. Ensure the SO-8 package dimensions align with the target PCB layout requirements.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power switching. The SO-8 package provides a balance between thermal dissipation and board space efficiency. Evaluate the 20mΩ on-resistance against the expected load currents to ensure adequate thermal performance without excessive heat sinking.

Part Context

This part belongs to the DMT3020 series of dual N-channel MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The DMT3020LSD variant specifically utilizes the SO-8 case style, distinguishing it from other package options within the same electrical family.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q100 qualification, consult the separate datasheet for the DMT3020LSDQ variant. Verify pinout compatibility and thermal resistance values when substituting with other dual N-channel MOSFETs in the SO-8 package.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 16A at a case temperature of +25°C and 13A at a case temperature of +70°C.

Does the device support unclamped inductive switching?

Yes, the device undergoes 100% unclamped inductive switching (UIS) testing in production to ensure reliability.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is specified as 20°C/W.