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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel, Common Drain, Common Source (Asymmetrical)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 47A (Tc)
- Rds On (Max) @ Id, Vgs：2.9mOhm @ 18A, 10V, 2.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V, 31.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2106pF @ 15V, 2101pF @ 15V
- Power - Max：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type G)
- Grade：-
- Qualification：-
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Overview
The DMT32M7LDG-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and is housed in a PowerDI3333-8 surface-mount package. The device utilizes silicon technology for reliable operation across an extended temperature range from -55°C to +150°C junction temperature. Designed for high-efficiency switching applications, it offers low on-resistance characteristics suitable for power management circuits. The component is supplied in tape and reel packaging with a standard factory quantity of 3000 units per reel.
Feature Summary
- Dual N-channel configuration integrated into a single compact surface-mount package
- Enhancement mode operation optimized for low-voltage switching applications
- Robust thermal performance supporting high junction temperatures up to 150°C
- Compliant with RoHS standards and free from halogenated flame retardants
Applications
- DC-DC converter synchronous rectification stages
- Low-voltage load switch implementations
- Battery protection circuitry in portable devices
- Power distribution networks in consumer electronics
Procurement Notes
Verify the specific ordering suffix and manufacturer part number against official Diodes Incorporated documentation before procurement. Confirm that the PowerDI3333-8 package dimensions match your PCB footprint requirements. Ensure compliance with relevant environmental directives such as RoHS if applicable to your region. Cross-reference the datasheet revision date to guarantee access to the most current electrical specifications and reliability data.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required for space-constrained designs operating at low voltages. The PowerDI3333-8 package provides a balance between thermal dissipation and board area efficiency. Consider the gate charge and on-resistance parameters relative to your switching frequency and efficiency targets. Ensure the maximum continuous drain current rating exceeds the peak load requirements of your specific application circuit.
Part Context
This part belongs to the DMT series of dual MOSFETs from Diodes Incorporated, designed for efficient power management in compact electronic systems. The series emphasizes low profile and high thermal performance through advanced packaging technologies. These components are commonly utilized in mobile phones, tablets, and other portable devices where space and power efficiency are critical design constraints.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Ensure any replacement maintains compatible pinout, package dimensions, and electrical ratings. Verify that substitute parts meet the same environmental and regulatory compliance standards required for your production environment.
