DMT35M1LFVW-7

$0.17

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4bc788340173 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1057 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT35M1LFVW-7

Overview

The DMT35M1LFVW-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device offers a low on-state resistance (RDS(ON)) of 5.5mΩ at VGS=10V with a continuous drain current (ID) of 64A at TC=+25°C, or 9mΩ at VGS=4.5V with an ID of 50A. It utilizes the PowerDI3333-8/SWP (Type UX) package, providing a compact form factor with thermal efficiency suitable for high-density applications.

Feature Summary

Low RDS(ON) design minimizes on-state power losses while maintaining superior switching performance.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
100% Unclamped Inductive Switching (UIS) tested in production for robustness.

Applications

Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix to confirm packing quantity and carrier type. The -7 suffix indicates a 2,000-unit tape and reel, while -13 denotes 3,000 units. Confirm compliance requirements such as RoHS 3 and Halogen-free status directly from the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring a 30V rating with high current handling capabilities in a minimal footprint. Evaluate the thermal resistance values (RθJA and RθJC) against the expected ambient temperature and heat dissipation constraints. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.

Part Context

This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated, designed for general-purpose power management. It is housed in the PowerDI3333-8/SWP package, which is characterized by its small size and exposed drain pad for improved thermal performance compared to traditional surface-mount packages.