DMT4011LSS-13

$0.15

Description：MOSFET N-CH 40V 10.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:96e54e6b4f4e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 10.8A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：829 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.31W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT4011LSS-13

Overview

The DMT4011LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source voltage rating and an SO-8 surface-mount package. The device provides a maximum continuous drain current of 10.8A at 25°C with a low on-state resistance of 11.5mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage ranging from 1.1V to 2.4V, total gate charge of 14.3nC at VGS=10V, and a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Totally lead-free and fully RoHS compliant, ensuring compliance with EU directives.
Halogen and antimony free construction classified as a "Green" device.

Applications

DC-DC Converters
Synchronous Rectification
Power Supplies

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental directives relevant to your manufacturing region. Ensure the supplier source is authorized to guarantee product authenticity and traceability. Cross-reference the datasheet revision number to confirm technical specifications align with your design requirements before finalizing procurement.

Selection Notes

Select this component when a 40V N-channel MOSFET in an SO-8 package is required for compact designs. Evaluate the thermal resistance characteristics against your board layout constraints. Consider the gate charge values for driving circuit compatibility. Verify that the continuous drain current ratings meet the peak load demands of the target application under expected operating temperatures.

Part Context

This part belongs to the DMT4011LSS series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on low on-resistance and fast switching capabilities. The standard SO-8 case style facilitates automated surface mount assembly. The product line targets general-purpose power management solutions requiring efficient energy conversion.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Do not assume pin-compatible alternatives possess identical electrical characteristics without reviewing their respective datasheets.