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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 8.5A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 26.5A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：750pF @ 20V
- Power - Max：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMT4014LDV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in the PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 40V and a maximum on-resistance (RDS(ON)) of 19mΩ at VGS=10V, supporting a continuous drain current of 26.5A at TC=+25°C. The device includes an integrated body diode with a forward voltage of 1.2V max at IS=20A. Electrical characteristics include a gate threshold voltage of 1V to 3V, total gate charge of 11.2nC at VGS=10V, and operating temperatures ranging from -55°C to +150°C.
Feature Summary
- Features 100% unclamped inductive switching (UIS) testing in production for enhanced reliability.
- Designed to minimize on-state resistance while maintaining superior switching performance.
- Compliant with RoHS directives and halogen/antimony-free green standards.
Applications
- Wireless charging systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental compliance standards, including RoHS and lead-free specifications, before finalizing procurement orders.
Selection Notes
Select this component when a low-profile dual N-channel MOSFET is required for high-efficiency power management applications. Ensure the design accommodates the thermal constraints associated with the PowerDI3333-8 package, particularly regarding junction-to-ambient thermal resistance under steady-state conditions.
Part Context
This part belongs to the DMT4014LDV series of 40V N-channel enhancement mode MOSFETs. It utilizes advanced trench technology to achieve low RDS(ON) and fast switching speeds within a compact surface-mount footprint designed for high power density.
Replacement Considerations
The DMT4014LDV-7 serves as a direct substitute offering identical electrical specifications but packaged in a 2,000-unit tape and reel format instead of the 3,000-unit configuration.
FAQ
What is the maximum pulsed drain current capability?
The device supports a pulsed drain current of 100A with a 10µs pulse width and a duty cycle of 1%.
Does the component support avalanche energy absorption?
Yes, it can withstand an avalanche energy of 19.6mJ with an inductance of 0.1mH.
