ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 7.8A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：7.8A (Ta), 21.2A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：808pF @ 30V
- Power - Max：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：-
- Qualification：-
Download product information
Overview
The DMT4015LDV-7 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a 40V drain-source voltage rating and a maximum continuous drain current of 21.2A at 25°C case temperature. The device offers a low on-resistance of 20mΩ at VGS=10V and 25mΩ at VGS=4.5V. Operating temperatures range from -55°C to +150°C, with total power dissipation reaching 2.0W under thermal bias conditions.
Feature Summary
- Features 100% unclamped inductive switching (UIS) testing for enhanced reliability.
- Designed to minimize on-state resistance while maintaining superior switching performance.
- Includes gate protection diodes for ESD protection.
Applications
- Wireless Charging
- DC-DC Converters
- Power Management
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantities and reel specifications. Ensure compliance with RoHS directives and confirm that the component meets environmental requirements such as halogen-free status before procurement.
Selection Notes
Select this component for applications requiring high efficiency power management within a compact surface-mount footprint. Evaluate thermal resistance values based on the specific PCB copper area and mounting configuration to ensure safe operating area limits are respected during design.
Part Context
This part belongs to the Diodes Incorporated DMT series of silicon N-channel MOSFETs. It utilizes the PowerDI3333-8 (Type UXC) leadless package designed for automated surface mount assembly. The product line focuses on providing robust switching capabilities in small form factors suitable for portable electronics.
Replacement Considerations
Consult official manufacturer cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters and thermal characteristics against the original datasheet.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for gate-source voltage is ±16V.
Is the device qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification or PPAP capability, customers must contact Diodes Incorporated directly.
What is the typical avalanche energy rating?
The avalanche energy rating is 21.4 mJ with an inductance of 0.1mH.
