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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 6.3A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6.3A (Ta)
- Rds On (Max) @ Id, Vgs：23mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：362pF @ 20V
- Power - Max：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMT4031LSD-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type F) surface-mount package with a 0.6mm profile and a 4mm² footprint. The device supports a drain-source voltage of 40V and offers low on-resistance, rated at 26mΩ maximum at VGS=10V and 47mΩ at VGS=4.5V. Continuous drain current reaches 6.8A at +25°C ambient temperature. It includes an integrated ESD protected gate and undergoes 100% unclamped inductive switching testing.
Feature Summary
- Integrated ESD protection for the gate terminal
- Low profile construction suitable for space-constrained designs
- Robust reliability verified through production UIS testing
Applications
- DC-DC converters
- Adaptor switches
- Wireless charging systems
Procurement Notes
Verify that the specific ordering suffix matches the required reel quantity configuration. Confirm compliance with RoHS directives and halogen-free requirements if mandated by project specifications. Ensure the component is sourced from authorized channels to guarantee authenticity and adherence to standard terms of sale.
Selection Notes
Select this component for applications requiring high-efficiency power management within a compact form factor. Evaluate thermal resistance values against expected PCB copper area and ambient conditions. Verify that the 40V rating provides adequate margin for the target circuit's operating voltage and transient spikes.
Part Context
This part belongs to the DM series of MOSFETs designed for minimizing on-state resistance while maintaining superior switching performance. It utilizes silicon technology and is housed in a molded plastic case classified as UL 94V-0. The terminals are finished with NiPdAu over a copper leadframe to ensure solderability.
Replacement Considerations
Consult official documentation for direct pin-compatible substitutes. Verify that any alternative component maintains equivalent voltage ratings, current capabilities, and package dimensions before implementation.
