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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 11.9A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：11.9A (Ta), 30.2A (Tc)
- Rds On (Max) @ Id, Vgs：10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：891pF @ 20V
- Power - Max：2.34W (Ta), 14.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXC)
- Grade：-
- Qualification：-
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Overview
The DMT47M2LDV-13 is a dual N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a 40V drain-source voltage and a maximum continuous drain current of 30.2A at TC = +25°C. The on-resistance is 10.8mΩ max at VGS = 10V and 15mΩ max at VGS = 4.5V. Total gate charge is 14.0nC max at VGS = 10V, with an input capacitance of 891pF max at VDS = 20V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual configuration for compact power management designs
- Optimized low on-state resistance for high efficiency
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 automotive standards
Applications
- Motor control systems
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets RoHS compliance requirements and matches the PowerDI3333-8 (Type UXC) mechanical dimensions specified in the datasheet before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a dual N-channel MOSFET with a 40V rating. Ensure the design accommodates the 10.8mΩ on-resistance at VGS = 10V or the 15mΩ threshold at VGS = 4.5V. Verify thermal management capabilities against the 53.7°C/W junction-to-ambient thermal resistance for ambient temperature operation.
Part Context
This part belongs to Diodes Incorporated's DMT47 series of dual N-channel MOSFETs. It utilizes the PowerDI3333-8 surface-mount package designed for high-efficiency power management. The device is engineered to minimize on-state resistance while maintaining superior switching performance for modern electronic applications.
Replacement Considerations
The DMT47M2LDVQ is the automotive-compliant variant available under a separate datasheet. Other parts within the DMT47 family may offer different channel configurations or voltage ratings.
FAQ
What is the maximum continuous drain current at case temperature?
The maximum continuous drain current is 30.2A when measured at a case temperature of +25°C.
Is this component suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability, though an automotive-specific version exists under a separate datasheet.
How does the on-resistance vary with gate voltage?
The static drain-source on-resistance is 10.8mΩ max at VGS = 10V and increases to 15mΩ max at VGS = 4.5V.
