DMT69M5LFVWQ-13

$0.30

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:076af9024b81 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：14.8A (Ta), 40.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.3mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1406 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.74W (Ta), 20.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMT69M5LFVWQ-13

Overview

The DMT69M5LFVWQ-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a maximum drain-source voltage of 60V, a continuous drain current of 40.6A at TC=+25°C, and a static drain-source on-resistance of 8.3mΩ at VGS=10V. The device supports a gate-source voltage range of ±20V and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Qualified for automotive applications with PPAP capability and IATF 16949 manufacturing certification
Features wettable flanks to facilitate improved optical inspection during assembly
Includes 100% unclamped inductive switching (UIS) testing in production for enhanced reliability
Constructed with a thermally efficient package designed to support higher density end products

Applications

Backlighting systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape and reel quantities. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free specifications. Ensure the selected variant aligns with the intended thermal and electrical requirements for the target application environment.

Selection Notes

Select this component when an automotive-grade N-channel MOSFET with low on-resistance is required. Consider the PowerDI3333-8 package dimensions for space-constrained designs. Evaluate the thermal resistance characteristics relative to the expected operating conditions and duty cycles to ensure adequate heat dissipation without exceeding maximum junction temperatures.

Part Context

This part belongs to the DMT69 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered for high-density power applications requiring robust performance in automotive environments. The specific model integrates advanced silicon technology to minimize conduction losses while maintaining reliable switching capabilities under varying load conditions.