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Product Detailed Parameters
- Description：MOSFET N-CH 80V 44A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1949 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMT8012LK3-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a TO252 (DPAK) form factor. It features a drain-source breakdown voltage of 80V and a maximum continuous drain current of 44A at a case temperature of +25°C. The device offers a low on-state resistance of 17mΩ at VGS = 10V and 22mΩ at VGS = 4.5V. Designed for high-efficiency power management, it combines minimized conduction losses with fast switching capabilities.
Feature Summary
- Minimizes on-state resistance to ensure low conduction losses while maintaining superior switching performance
- Designed for high conversion efficiency in synchronous rectifier and DC-DC converter applications
- Features low input capacitance and fast switching speed for optimized dynamic operation
Applications
- Synchronous rectifiers
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the official datasheet. Confirm that the component meets RoHS compliance and is halogen and antimony free. Ensure the application environment does not require automotive-grade qualification, as this part is designed for general high-reliability JEDEC standards rather than AEC-Q series requirements.
Selection Notes
Select this component when an 80V rating is required alongside high current handling up to 44A at +25°C. Consider the thermal characteristics, specifically the junction-to-case thermal resistance of 2.5 °C/W, for heatsinking requirements. Evaluate the gate threshold voltage range of 1V to 3V to ensure compatibility with the intended logic or driver levels for optimal RDS(ON) performance.
Part Context
This device belongs to the DMT8012LK3 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a molded plastic package with a matte tin annealed finish over a copper leadframe. The product is classified under surface-mount technology components designed for robust performance in compact power electronics designs requiring reliable thermal and electrical characteristics.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Consult the manufacturer's automotive products listing for equivalents qualified to AEC-Q100/101/104/200 standards and PPAP capable manufacturing processes.
