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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 46W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H015LPSWQ-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum on-resistance of 16mΩ at VGS=10V and 18mΩ at VGS=6V, with a continuous drain current of 44A at TC=+25°C. The device supports an operating temperature range up to +175°C and includes 100% unclamped inductive switching capability.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% tested unclamped inductive switching for robust end applications
- Designed to minimize on-state losses while maintaining fast switching speeds
Applications
- Notebook battery power management
- Load switches
- Motor controls
- DC-DC converters
- Power management systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if the target application involves automotive manufacturing processes. Ensure compliance with IATF 16949 certified facility production protocols.
Selection Notes
Select this component when low conduction loss is critical alongside high thermal tolerance. The PowerDI5060-8 package provides efficient heat dissipation suitable for compact designs. Evaluate gate drive voltage requirements against the specified RDS(ON) thresholds at 10V and 6V to ensure optimal efficiency within the system constraints.
Part Context
This part belongs to Diodes Incorporated's DMTH10 series of high-performance N-channel MOSFETs. These devices utilize advanced silicon technology to achieve superior switching performance and reduced on-resistance compared to previous generations, targeting demanding power management applications.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters carefully before implementation.
