DMTH10H017LPD-13

$1.72

Description：MOSFET 2N-CH 100V 59A PWRDI50
Series：-

SKU:1d38fece5b0d Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 59A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：59A (Tc)
Rds On (Max) @ Id, Vgs：17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1986pF @ 50V
Power - Max：2.6W (Ta), 93W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type E)
Grade：-
Qualification：-

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DMTH10H017LPD-13

Overview

The DMTH10H017LPD-13 is a dual N-channel enhancement mode MOSFET rated for 100V drain-source voltage and operating up to +175°C. It utilizes the PowerDI5060-8 package. At TC = +25°C, it supports a continuous drain current of 59A with a maximum on-resistance of 17.4mΩ at VGS = 10V. The device features low input capacitance and fast switching speeds, making it suitable for high-efficiency power management applications.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features low on-resistance to minimize conduction losses
Includes 100% unclamped inductive switching (UIS) testing for robustness

Applications

Synchronous rectifiers
DC-DC converters
Primary side switching

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2500 units per carrier. Confirm that the component meets RoHS compliance standards and is halogen and antimony free as defined by the manufacturer's green product specifications before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring dual N-channel MOSFETs capable of handling high temperatures up to +175°C. Ensure the application benefits from the low on-resistance characteristics for improved efficiency. Verify that the PowerDI5060-8 package dimensions align with the PCB layout requirements and thermal management strategy.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed for high-efficiency power management. It is distinct from single-channel variants and automotive-specific versions like the DMTH10H017LPDQ. The dual configuration allows for compact designs in synchronous rectification and DC-DC conversion topologies.

Replacement Considerations

The DMTH10H017LPDQ is an automotive-compliant alternative available under a separate datasheet. Verify if the specific reliability requirements of the target application necessitate the automotive qualification provided by the Q-suffix variant over the standard industrial version.

FAQ

Is the DMTH10H017LPD-13 qualified for automotive applications?

No, the standard DMTH10H017LPD-13 is not automotive qualified. An automotive-compliant version, DMTH10H017LPDQ, is available under a separate datasheet.