DMTH10H017LPDQ-13

$1.84

Description：MOSFET 2N-CH 100V 13A PWRDI50
Series：-

SKU:68ad3689cd76 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 13A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs：17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1986pF @ 50V
Power - Max：1.5W (Ta), 93W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type E)
Grade：Automotive
Qualification：AEC-Q101

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DMTH10H017LPDQ-13

Overview

The DMTH10H017LPDQ-13 is a dual N-channel enhancement mode MOSFET rated for 100V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 17.4mΩ at VGS=10V and 30.3mΩ at VGS=4.5V, with continuous drain currents of 59A (TC=25°C) or 42A (TC=100°C). The device utilizes a PowerDI5060-8 package, supports 100% UIS testing, and meets AEC-Q101 automotive standards.

Feature Summary

Dual N-channel configuration in a single compact PowerDI5060-8 package
Qualified to AEC-Q101 automotive standards with PPAP capability
Rated for high ambient temperatures up to +175°C junction temperature
Guaranteed 100% unclamped inductive switching (UIS) performance

Applications

Synchronous rectifiers
DC-DC converters
Primary side switching

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2500 units. Confirm that the component meets all applicable RoHS and REACH directives for your target market. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet to maintain safe operating limits under expected load conditions.

Selection Notes

Select this component when a dual N-channel topology is required within a constrained board area. The low on-resistance minimizes conduction losses, while the high-temperature rating suits environments where standard silicon devices may fail. Verify gate drive voltages align with the specified thresholds for optimal switching efficiency.

Part Context

This part belongs to Diodes Incorporated's DMTH10 series of automotive-grade power MOSFETs. It is manufactured in IATF 16949 certified facilities and designed specifically for applications requiring robust reliability and high conversion efficiency in demanding electrical environments.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specifications.