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The DMTH10H025LPDW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and a continuous drain current of 28A. The device exhibits a maximum on-resistance of 25 milliohms at a gate-source voltage of 10V. It is housed in the PowerDI5060-8 surface-mount package, designed for efficient thermal dissipation. The component supports an operating temperature range from -55°C to +175°C and complies with RoHS standards.
Verify the specific suffix '13' indicates the standard tape-and-reel packaging configuration as defined by the manufacturer. Confirm that the PowerDI5060-8 package dimensions match the target PCB layout requirements. Ensure compliance with RoHS directives is documented for the specific production batch prior to integration into final assemblies.
Select this component when a 100V N-channel MOSFET with a 28A current rating is required in a PowerDI5060-8 package. The 25mΩ on-resistance makes it suitable for applications prioritizing efficiency over extreme high-current density. Consider the thermal characteristics of the specific substrate when designing heat dissipation paths for the surface-mount form factor.
This part belongs to the DMTH10H series of superjunction MOSFETs from Diodes Incorporated. These devices are engineered for high-frequency switching applications requiring low gate charge and fast switching speeds. The series utilizes advanced silicon technology to achieve superior figure-of-merit compared to conventional planar MOSFETs in similar voltage classes.
Direct substitutes include other DMTH10H series variants with compatible pinouts and electrical ratings, such as DMTH10H029LFDFWQ-13, provided the package type matches the design constraints. Cross-reference datasheets for exact Rds(on) and Qg values to ensure equivalent performance.