DMTH10H025LPDW-13

DMTH10H025LPDW-13

$0.48
  • Description:MOSFET 2N-CH 100V 28A PWRDI50
  • Series:-

SKU:1e2f85f0f95e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 28A PWRDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:28A (Tc)
  • Rds On (Max) @ Id, Vgs:23mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1463pF @ 50V
  • Power - Max:3.4W (Ta), 40W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerDI5060-8 (Type UXD)
  • Grade:-
  • Qualification:-

Download product information

DMTH10H025LPDW-13

Overview

The DMTH10H025LPDW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and a continuous drain current of 28A. The device exhibits a maximum on-resistance of 25 milliohms at a gate-source voltage of 10V. It is housed in the PowerDI5060-8 surface-mount package, designed for efficient thermal dissipation. The component supports an operating temperature range from -55°C to +175°C and complies with RoHS standards.

Feature Summary

  • High-efficiency power switching capability with low conduction losses
  • Robust thermal performance within a compact surface-mount footprint
  • Enhanced mode operation for reliable digital or analog control

Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power management modules

Procurement Notes

Verify the specific suffix '13' indicates the standard tape-and-reel packaging configuration as defined by the manufacturer. Confirm that the PowerDI5060-8 package dimensions match the target PCB layout requirements. Ensure compliance with RoHS directives is documented for the specific production batch prior to integration into final assemblies.

Selection Notes

Select this component when a 100V N-channel MOSFET with a 28A current rating is required in a PowerDI5060-8 package. The 25mΩ on-resistance makes it suitable for applications prioritizing efficiency over extreme high-current density. Consider the thermal characteristics of the specific substrate when designing heat dissipation paths for the surface-mount form factor.

Part Context

This part belongs to the DMTH10H series of superjunction MOSFETs from Diodes Incorporated. These devices are engineered for high-frequency switching applications requiring low gate charge and fast switching speeds. The series utilizes advanced silicon technology to achieve superior figure-of-merit compared to conventional planar MOSFETs in similar voltage classes.

Replacement Considerations

Direct substitutes include other DMTH10H series variants with compatible pinouts and electrical ratings, such as DMTH10H029LFDFWQ-13, provided the package type matches the design constraints. Cross-reference datasheets for exact Rds(on) and Qg values to ensure equivalent performance.

DMTH10H025LPDW-13DMTH10H025LPDW-13
$0.48
Buy Now