DMTH10H032LDVWQ-13

DMTH10H032LDVWQ-13

$0.30
  • Description:MOSFET 2N-CH 100V 7.2A PWRDI3333
  • Series:-

SKU:87279559bbef Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 7.2A PWRDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
  • Rds On (Max) @ Id, Vgs:32mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:683pF @ 50V
  • Power - Max:1.5W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PowerDI3333-8 (SWP) (Type UXD)
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

DMTH10H032LDVWQ-13

Overview

The DMTH10H032LDVWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive with 10 A current. Key electrical parameters include a maximum gate charge of 11.9 nC at 10 V, an input capacitance of 683 pF at 50 V, and a gate-source threshold voltage of 2.5 V at 250 µA. The component operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • Surface-mount construction with wettable flanks for enhanced solder joint inspection reliability.
  • Automotive-grade qualification compliant with AEC-Q101 standards.
  • Optimized low on-resistance characteristics for efficient power switching applications.

Applications

  • Automotive power distribution systems
  • High-side and low-side load switch circuits
  • DC-DC converter output stages

Procurement Notes

Verify the specific suffix 'Q' indicates automotive grade compliance and 'L' denotes lead-free composition as per Diodes Incorporated documentation. Confirm package type PowerDI3333-8(SWP)UX matches PCB footprint requirements. Ensure ordering quantities align with manufacturer tape-and-reel specifications. Cross-reference datasheet revisions to confirm parameter stability before finalizing procurement contracts.

Selection Notes

Select this component when designing for 100 V automotive environments requiring robust surface-mount reliability. The wettable flank package facilitates automated optical inspection, critical for high-reliability automotive assemblies. Evaluate thermal management needs against the 1.7 W dissipation rating at ambient temperature. Ensure gate drive voltages remain within the specified limits to maintain optimal Rds(on) performance without exceeding absolute maximum ratings.

Part Context

This part belongs to the DMTH10 series of automotive-grade N-channel MOSFETs from Diodes Incorporated. The series targets high-volume automotive electronics demanding strict quality standards. The PowerDI3333-8 package provides a compact form factor suitable for space-constrained printed circuit boards while maintaining adequate thermal performance for moderate current applications in vehicle electrical architectures.

Replacement Considerations

DMTH10H032LFVW-7

FAQ

What does the SWP designation indicate in the package name?

SWP stands for Wettable Flanks, a feature allowing visual inspection of solder joints under the component body to ensure connection integrity.

Is this component qualified for automotive use?

Yes, the Q suffix indicates the device is qualified according to the AEC-Q101 stress test qualification standard for automotive integrated circuits.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

DMTH10H032LDVWQ-13DMTH10H032LDVWQ-13
$0.30
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