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The DMTH10H032LDVWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive with 10 A current. Key electrical parameters include a maximum gate charge of 11.9 nC at 10 V, an input capacitance of 683 pF at 50 V, and a gate-source threshold voltage of 2.5 V at 250 µA. The component operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix 'Q' indicates automotive grade compliance and 'L' denotes lead-free composition as per Diodes Incorporated documentation. Confirm package type PowerDI3333-8(SWP)UX matches PCB footprint requirements. Ensure ordering quantities align with manufacturer tape-and-reel specifications. Cross-reference datasheet revisions to confirm parameter stability before finalizing procurement contracts.
Select this component when designing for 100 V automotive environments requiring robust surface-mount reliability. The wettable flank package facilitates automated optical inspection, critical for high-reliability automotive assemblies. Evaluate thermal management needs against the 1.7 W dissipation rating at ambient temperature. Ensure gate drive voltages remain within the specified limits to maintain optimal Rds(on) performance without exceeding absolute maximum ratings.
This part belongs to the DMTH10 series of automotive-grade N-channel MOSFETs from Diodes Incorporated. The series targets high-volume automotive electronics demanding strict quality standards. The PowerDI3333-8 package provides a compact form factor suitable for space-constrained printed circuit boards while maintaining adequate thermal performance for moderate current applications in vehicle electrical architectures.
DMTH10H032LFVW-7
SWP stands for Wettable Flanks, a feature allowing visual inspection of solder joints under the component body to ensure connection integrity.
Yes, the Q suffix indicates the device is qualified according to the AEC-Q101 stress test qualification standard for automotive integrated circuits.
The maximum operating junction temperature is 175°C.