DMTH10H032LFVWQ-13

$0.88

Description：MOSFET BVDSS: 61V~100V PowerDI33
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:c9c34fc47536 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V PowerDI33
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH10H032LFVWQ-13

Overview

The DMTH10H032LFVWQ-13 is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source on-resistance of 30mΩ at VGS=10V and 50mΩ at VGS=4.5V, supporting continuous drain currents of 26A at TC=+25°C and 21A at VGS=4.5V. The device operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI3333-8/SWP (Type UX) package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Features wettable flank terminals to facilitate improved optical inspection
Manufactured in IATF 16949 certified facilities
Totally lead-free, halogen-free, and antimony-free green device

Applications

Backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration. Confirm that the PowerDI3333-8/SWP (Type UX) package variant matches the design requirements for wettable flank visibility during automated optical inspection processes.

Selection Notes

Select this component when designing circuits requiring robust UIS performance and high-density packaging. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) characteristics. Verify thermal management strategies accommodate the specified junction-to-ambient resistance values under intended operating conditions.

Part Context

This part belongs to Diodes Incorporated's DMTH10 series of automotive-grade N-channel MOSFETs. It shares the same core electrical specifications as the DMTH10H032LFVWQ-7 but differs in the standard packing quantity provided in the tape and reel format.