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The DMTH10H032SDVWQ-13 is an N-channel MOSFET manufactured by Diodes Incorporated, designed for surface-mount applications. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at 10 V gate drive. It utilizes the PowerDI3333-8(SWP)UX package, supporting wettable flanks for enhanced inspection reliability. The component operates within a junction temperature range of -55°C to 175°C and meets automotive qualification standards.
Verify the specific suffix against official Diodes Incorporated documentation to confirm package type and tape-and-reel specifications. Ensure the procurement channel provides valid traceability records required for automotive-grade components. Cross-reference the full part number with the manufacturer's latest datasheet to confirm compliance with RoHS3 and REACH regulations before finalizing orders.
Select this component when designing circuits requiring 100 V blocking capability with moderate current handling in compact footprints. The wettable flank package facilitates automated optical inspection, reducing defect rates in high-volume manufacturing. Consider thermal management requirements carefully, as the small form factor limits heat dissipation compared to larger packages. Verify gate charge parameters against driver capabilities to ensure optimal switching performance.
This part belongs to the DMTH10 series of automotive-grade N-channel MOSFETs from Diodes Incorporated. The series focuses on balancing low on-resistance with robust packaging solutions suitable for harsh automotive environments. The DMTH10H032SDVWQ-13 specifically targets applications needing reliable switching in space-constrained designs where visual inspection of solder joints is critical.
Consult Diodes Incorporated official substitution guides for verified equivalents. Generic cross-references may not match the specific wettable flank package or automotive qualification status.