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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 25A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Rds On (Max) @ Id, Vgs：33mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：544pF @ 50V
- Power - Max：2.7W (Ta), 39W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMTH10H038SPDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a 100V drain-source voltage rating and a maximum on-resistance of 33mΩ at VGS=10V. The device supports continuous drain currents of 25A at +25°C case temperature and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Dual N-channel configuration with low input capacitance for fast switching speeds
- Wettable flank design with additional tin-plated sidewall pads for improved optical inspection
- Rated for high ambient temperatures up to +175°C
- 100% unclamped inductive switching (UIS) tested in production
Applications
- DC-DC converters
- Motor control systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2500 units. Confirm that the wettable flank variant matches your automated optical inspection requirements. Ensure compliance with RoHS 3 and halogen-free specifications if mandated by your assembly standards.
Selection Notes
Select this component when a compact dual MOSFET solution is required for power management applications. The PowerDI5060-8 package offers a balance between thermal performance and board space efficiency. Consider the 33mΩ on-resistance limit for conduction loss calculations under expected load conditions.
Part Context
This part belongs to the DMTH10 series of dual MOSFETs designed for high-efficiency power conversion. The 'SPDW' designation indicates the specific PowerDI5060-8/SWP package type with wettable flanks. The '-13' suffix denotes the standard tape and reel packaging format used for surface mount assembly.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the PCB layout.
FAQ
What is the maximum operating junction temperature?
The device is rated for an operating and storage temperature range of -55°C to +175°C.
Does the package support automated optical inspection?
Yes, the PowerDI5060-8/SWP package features wettable flanks and additional tin-plated sidewall pads specifically designed to facilitate optical solder inspection.
Is the device qualified for automotive applications?
For automotive applications requiring AEC-Q100/101/104/200 qualification or PPAP capability, customers must contact Diodes Incorporated directly as these are special change control requirements.
