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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4843 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：4.7W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H4M5LPSWQ is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 100V and a low on-resistance of 4.9mΩ at VGS=10V, supporting a continuous drain current of 107A at TC=25°C. The device operates within a junction temperature range of -55°C to +175°C and is housed in a PowerDI5060-8/SWP package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- 100% Unclamped Inductive Switching (UIS) tested in production
- Low input capacitance and fast switching speed for high efficiency
Applications
- Motor control systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets IATF 16949 manufacturing facility requirements and holds necessary environmental compliance certifications such as RoHS 3 and Halogen-free status before finalizing procurement specifications.
Selection Notes
Select this component when designing automotive-grade power stages requiring robust UIS performance and high conversion efficiency. Ensure the thermal design accommodates the specified RθJA and RθJC values for the intended ambient or case temperatures. Verify gate drive voltages align with the threshold characteristics to maintain optimal on-resistance levels during operation.
Part Context
This part belongs to the DMTH10 series of automotive MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8/SWP surface-mount package, which provides a compact footprint suitable for dense PCB layouts while maintaining high thermal dissipation capabilities through an exposed drain pad.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Do not assume cross-compatibility with other brands or different pinout configurations without validating electrical parameters and mechanical dimensions against the original datasheet.
