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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：5741 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta), 113W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH31M7LPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package and is rated for a drain-source voltage of 30V. The device supports a maximum continuous drain current of 100A at a case temperature of +25°C, with an on-resistance of 1.7mΩ at VGS=10V and 2.4mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +175°C and features a total power dissipation capacity of 113W at TC=+25°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Low on-resistance minimizes conduction losses during switching operations
- Optimized figure of merit (FOM) combining gate-drain charge and on-resistance
- Guaranteed 100% unclamped inductive switching capability for enhanced reliability
Applications
- Automotive backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm AEC-Q101 qualification status and PPAP documentation availability for automotive supply chain compliance. Ensure ordering suffix matches required packaging specifications. Validate RoHS and halogen-free material declarations against project requirements before final procurement.
Selection Notes
Evaluate thermal resistance characteristics relative to the specific PCB layout and copper area available. Consider gate threshold voltage variations across the operating temperature range when designing drive circuits. Assess safe operating area limits under pulsed conditions to ensure adequate margin for transient load events.
Part Context
This component belongs to the DMTH series of automotive-grade MOSFETs designed for high-current applications. It is manufactured in IATF16949:2016 certified facilities and meets stringent automotive quality standards. The PowerDI5060-8 package provides a thermally efficient form factor suitable for high-density board designs.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pin configurations and electrical parameters carefully. Verify that any substitute part maintains equivalent AEC-Q101 qualification and PPAP support if used in automotive contexts.
