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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 11.1A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：11.1A (Ta), 42A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：805pF @ 20V
- Power - Max：2.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH4011SPDQ is a dual N-channel enhancement mode MOSFET rated for 40V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 15mΩ at VGS=10V and supports continuous drain currents of 42A at TC=+25°C. The device utilizes the PowerDI5060-8 package, offering low input capacitance and fast switching speeds. It is AEC-Q101 qualified and PPAP capable, designed for automotive applications requiring specific change control.
Feature Summary
- Dual configuration with independent channels in a single compact package
- Qualified for high ambient temperature environments up to +175°C
- 100% unclamped inductive switching capability for robust performance
- Totally lead-free and fully RoHS compliant green device
Applications
- Automotive backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the complete part number including the -13 suffix for tape and reel packaging quantities. Confirm AEC-Q101 qualification status and IATF 16949 manufacturing facility compliance if automotive change control requirements are mandatory. Ensure thermal management design accounts for the specified junction-to-ambient resistance values under intended mounting conditions.
Selection Notes
Select this component when dual isolated channels are required within a limited board area. The low on-resistance minimizes conduction losses in power paths. Verify that the 40V rating exceeds the maximum circuit voltage with appropriate margins. Consider the thermal characteristics and package type for heat dissipation requirements in high-current applications.
Part Context
This dual MOSFET belongs to Diodes Incorporated's automotive-grade PowerDI series. It integrates two N-channel enhancement mode transistors into one footprint, replacing discrete single-channel solutions. The PowerDI5060-8 package provides improved thermal performance compared to smaller SMD packages while maintaining a small profile suitable for dense PCB layouts.
Replacement Considerations
Check pinout compatibility and electrical parameters against existing designs. Verify that substitute parts meet the same AEC-Q101 qualification and PPAP requirements. Ensure the replacement maintains the +175°C operating temperature rating and similar on-resistance specifications.
