ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10.2A (Ta), 27.5A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：750pF @ 20V
- Power - Max：1.16W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The DMTH4014LDVWQ is a dual N-channel enhancement mode MOSFET in a POWERDI3333-8/SWP package. It features a 40V drain-source voltage rating and operates up to +175°C. Maximum on-resistance is 15mΩ at VGS=10V and 25mΩ at VGS=4.5V. Continuous drain current reaches 27.5A at TC=+25°C. The device includes wettable flanks for optical inspection, meets AEC-Q101 standards, and supports PPAP requirements.
Feature Summary
- Dual N-channel configuration with low on-resistance for minimized conduction losses
- Rated for high ambient temperatures up to +175°C
- Wettable flank design enables improved optical inspection reliability
- Qualified to AEC-Q101 automotive standards with PPAP capability
Applications
- Wireless charging systems
- DC-DC converters
- Automotive power management circuits
Procurement Notes
Verify the specific ordering suffix (-7 or -13) against the required tape and reel quantity of 2,000 or 3,000 units respectively. Confirm that the POWERDI3333-8/SWP (Type UXD) package variant matches the intended PCB footprint. Ensure compliance with RoHS 3 and halogen-free specifications if mandated by the end product regulations.
Selection Notes
Select this component when a compact dual MOSFET solution is required for 40V automotive applications. The low thermal resistance and high temperature rating make it suitable for space-constrained designs operating in harsh environments. Verify gate threshold voltage compatibility with the driving logic levels before integration into the final circuit design.
Part Context
This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the POWERDI3333-8/SWP package to provide enhanced thermal performance and reliable soldering characteristics. The device is manufactured in IATF 16949 certified facilities to support strict automotive quality control requirements.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
