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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：214A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5002 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.3W (Ta), 115W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH41M3LPSWQ-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum drain-source on-resistance of 1.38mΩ at VGS=10V and 2.3mΩ at VGS=4.5V, supporting continuous drain currents of 223A at TC=+25°C and 175A at VGS=4.5V. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 115W at TC=+25°C.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Wettable flank design enables improved optical inspection
- Qualified to AEC-Q101 standards with PPAP capability
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration. Confirm that the component meets IATF 16949 manufacturing requirements if automotive change control protocols are mandated by the end application specifications.
Selection Notes
Select this component for high-current applications requiring low conduction losses and robust thermal performance. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) characteristics. Verify PCB layout supports the exposed drain pad for effective heat dissipation to meet the rated current capabilities.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio designed for high ambient temperature environments. It utilizes a molded plastic 'Green' compound with UL 94V-0 flammability rating. The package profile is less than 1.1mm, suitable for space-constrained thin electronic assemblies.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume pin-compatible replacements without confirming electrical parameters and package dimensions match the original specifications.
