DMTH41M8SPSQ-13

$2.10

Description：MOSFET N-CH 40V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:589770a4b44a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：79.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6968 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.03W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMTH41M8SPSQ-13

Overview

The DMTH41M8SPSQ-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a 40V drain-source voltage rating and a maximum on-resistance of 1.8mΩ at VGS=10V and ID=30A. The device supports a continuous drain current of 210A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Total power dissipation reaches 150W at TC=+25°C, with a thermal resistance from junction to case of 1.0°C/W.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Thermally efficient package design for high conversion efficiency

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets IATF 16949 manufacturing facility requirements if PPAP documentation is required for your supply chain. Ensure compatibility with RoHS 3 and REACH regulations based on the latest manufacturer declarations.

Selection Notes

Select this component when designing circuits requiring low on-state losses and robust avalanche energy handling. The 40V rating suits 12V or 24V automotive systems. Consider the 1.8mΩ RDS(ON) for high-current paths where thermal management is critical. Verify gate drive voltage compatibility with the specified 10V test condition for optimal performance.

Part Context

This part belongs to Diodes Incorporated's DMTH41 series of automotive-grade N-channel MOSFETs. It utilizes the PowerDI5060-8 (Type K) leadless package, which offers a profile under 1.1mm. The series is designed to replace older plastic packages while providing improved thermal performance and lower inductance for modern automotive electronics.

Replacement Considerations

Check datasheet pinout compatibility before substituting. Verify that alternative parts meet the same AEC-Q101 qualification and RDS(ON) specifications. Ensure the replacement package matches the PowerDI5060-8 footprint and soldering requirements.