DMTH43M8SPDW-13

Overview

The DMTH43M8SPDW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8/SWP surface-mount package. The device features a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 100 A at case temperature. Its maximum on-resistance (Rds(on)) is specified as 3.3 mΩ at a gate-source voltage of 10 V. The component supports a gate-source voltage range of ±20 V and operates within a junction temperature range of -55°C to +175°C. Key switching parameters include a typical turn-on delay time of 5.2 ns, a fall time of 11 ns, and a total gate charge (Qg) of 38.5 nC.

Feature Summary

• High current handling capability with a 100 A continuous drain rating in the compact PowerDI5060-8/SWP package.
• Low on-resistance design optimized for efficient power management and reduced conduction losses.
• Robust thermal performance allowing operation up to a 175°C junction temperature.

Applications

• DC-DC converter circuits requiring high efficiency and compact form factors.
• Power management systems in automotive electronics.
• General-purpose low-side or high-side switching applications.

Procurement Notes

Verify the specific suffix 'SPDW' against the manufacturer's official datasheet to confirm the exact tape-and-reel packaging quantity and variant specifications. Ensure that the ordering information matches the required package style and reel configuration for your manufacturing process. Cross-reference the part number with authorized distributors to confirm availability and authenticity before placing orders.

Selection Notes

Select this component when a single N-channel MOSFET with a 40 V rating and high current capacity is required. The PowerDI5060-8/SWP package offers a balance between electrical performance and board space constraints. Consider the 3.3 mΩ Rds(on) specification for thermal management calculations and ensure the gate drive voltage aligns with the 10 V or 5 V testing conditions for optimal on-state performance.

Part Context

This part belongs to the DMTH series from Diodes Incorporated, which focuses on high-performance silicon MOSFETs. The DMTH43M8SPDW-13 is distinct from other variants like the DMTH43M8LPS-13 due to its specific PowerDI5060-8/SWP package designation. It serves as a discrete solution for power switching tasks where reliability and thermal efficiency are critical.

Replacement Considerations

Direct substitutes may include other Diodes Incorporated parts within the DMTH43M8 family, such as DMTH43M8LPS-13, provided the package footprint and pinout are compatible. Verify that any replacement maintains the same 40 V Vds, 100 A Id, and Rds(on) specifications. Always consult the latest mechanical drawings to ensure physical compatibility during PCB re-design or retrofitting.