DMTH4M90LPSW-13

$0.86

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ec7071944c38 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 31V~40V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：356A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：111 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9308 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：4.2W (Ta), 200W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

Download product information

DMTH4M90LPSW-13

Overview

The DMTH4M90LPSW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI 5060-8 surface-mount package with SWP configuration. The device features a drain-source breakdown voltage (BVDSS) range of 31V to 40V. It is supplied in tape and reel packaging, with a standard factory quantity of 2,500 units per reel.

Feature Summary

Single N-channel enhancement mode transistor architecture
PowerDI 5060-8 surface-mount package design
Silicon semiconductor technology implementation

Applications

Procurement Notes

Verify the specific electrical parameters against the official Diodes Incorporated datasheet for the DMTH4M90LPSW-13 before integration. Confirm that the BVDSS rating within the 31V-40V range meets circuit requirements. Ensure compatibility with the PowerDI 5060-8 footprint and check for any RoHS or REACH compliance documentation required for your region.

Selection Notes

Select this component when a single N-channel MOSFET with a 31V-40V breakdown voltage is required in a compact PowerDI 5060-8 package. Consider the SWP variant if specific pinout or thermal characteristics associated with that suffix are necessary. Verify that the continuous current and power dissipation capabilities align with the target application's thermal management constraints.

Part Context

This part belongs to the Diodes Incorporated MOSFET product line, specifically categorized under transistors. It shares the PowerDI 5060-8 form factor with other devices in the series, such as the DMT4M96LPSW-13 and DMTH4008LPSW-13, which also feature similar voltage ranges but may differ in on-resistance and current handling specifications.