DMTH6004SPS-13

DMTH6004SPS-13

$1.78
  • Description:MOSFET N-CH 60V 25A PWRDI5060
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:dbebea264840 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 25A PWRDI5060
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:25A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.1mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:95.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4556 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 167W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerDI5060-8
  • Package / Case:8-PowerTDFN

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DMTH6004SPS-13

Overview

The DMTH6004SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package and supports junction temperatures up to +175°C. The device features a drain-source voltage rating of 60V, a continuous drain current of 100A at TC = +25°C, and a maximum on-resistance of 3.1mΩ at VGS = 10V. It includes an integrated body diode with a forward voltage of 1.2V maximum.

Feature Summary

  • Rated for operation in high ambient temperature environments up to +175°C
  • Features low on-resistance to minimize power losses during conduction
  • Includes 100% unclamped inductive switching (UIS) testing for robustness
  • Utilizes lead-free finish and halogen/antimony-free green molding compound

Applications

  • DC motor controls
  • Synchronous rectifications
  • DC/DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the required thermal management aligns with the specified junction-to-case resistance values. Ensure application conditions do not exceed the absolute maximum ratings defined in the official datasheet.

Selection Notes

Select this component when designing circuits requiring high-efficiency power management within a compact footprint. The PowerDI5060-8 package provides excellent thermal dissipation capabilities suitable for dense PCB layouts. Consider the 60V breakdown voltage and 100A current capacity against peak load requirements.

Part Context

This part belongs to the DMTH6004 series of N-channel MOSFETs from Diodes Incorporated. It represents a newer generation designed specifically for high-efficiency applications. The standard version differs from automotive-compliant variants such as the DMTH6004SPSQ.

Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers. Cross-referencing requires matching the PowerDI5060-8 package dimensions and electrical characteristics precisely.

DMTH6004SPS-13DMTH6004SPS-13
$1.78
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