DMTH6004SPSQ-13

$2.15

Description：MOSFET N-CH 60V 100A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:efdeffb6f75e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH6004SPSQ-13

Overview

The DMTH6004SPSQ-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 3.1mΩ at VGS=10V and ID=50A, with a continuous drain current rating of 100A at TC=+25°C. The device supports an operating temperature range from -55°C to +175°C and has a total power dissipation of 167W at TC=+25°C. Key electrical parameters include a gate threshold voltage of 4V max, total gate charge of 95.4nC, and thermal resistance junction-to-case of 0.9°C/W.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production

Applications

DC motor controls
Synchronous rectifications
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements relevant to your region. Ensure that the supplier provides valid traceability documentation, including PPAP support, as this part is manufactured in IATF 16949 certified facilities for automotive use cases.

Selection Notes

Select this component when high current handling capability and low conduction losses are critical in compact designs. The PowerDI5060-8 package offers superior thermal performance compared to standard surface mount packages. Consider the +175°C rating for environments with elevated ambient temperatures where standard silicon limits would be exceeded.

Part Context

This device belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes silicon technology optimized for high reliability and robustness in demanding power management applications. The product line emphasizes low RDS(ON) and low Qg to minimize both static and dynamic power losses in switching circuits.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains equivalent voltage ratings, current capabilities, and package dimensions to fit existing footprints without redesign.