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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 9.4A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta), 36.3A (Tc)
- Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：825pF @ 30V
- Power - Max：2.6W (Ta), 39.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8 (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH6015LPDWQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (BVDSS) of 60V and a maximum gate-source voltage (VGSS) of ±16V. The device supports continuous drain currents of 36.3A at TC = +25°C and 9.4A at TA = +25°C. Static on-resistance (RDS(ON)) is rated at a maximum of 20mΩ at VGS = 10V and 27mΩ at VGS = 4.5V. It operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive applications.
- Rated for operation up to +175°C junction temperature.
- Features wettable flank terminals to improve optical inspection reliability.
- Includes ESD protection diodes on both gates.
Applications
- Wireless Charging systems
- DC-DC Converters
- Power Management circuits
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS42423 Rev. 2-2 to confirm authenticity and specifications. Ensure that the marking code matches the expected format 'TH6015LDW' followed by the date code. Confirm compliance with RoHS and halogen-free requirements as specified in the manufacturer's documentation before integration into production.
Selection Notes
Select this component when a dual N-channel configuration is required in a compact surface-mount footprint. The low on-resistance minimizes conduction losses, while the high thermal rating suits high ambient temperature environments. Verify that the 60V breakdown voltage aligns with the system's maximum operating voltage and transient conditions.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP case style, which provides enhanced thermal performance and solderability compared to standard packages. The suffix '-13' indicates the specific tape and reel packaging quantity defined by the manufacturer.
Replacement Considerations
No official substitute part numbers are listed in the provided documentation. When evaluating alternatives, ensure compatibility with the PowerDI5060-8/SWP footprint and verify that the replacement meets AEC-Q101 qualification if used in automotive contexts. Cross-compatibility should be validated through rigorous electrical and thermal testing.
