ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 7.6A 8SOIC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：7.6A (Ta)
- Rds On (Max) @ Id, Vgs：19.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：864pF @ 30V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The DMTH6016LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and supports junction temperatures up to +175°C. Key electrical parameters include a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 7.6A at TA = +25°C, and a maximum on-resistance (RDS(ON)) of 19.5mΩ at VGS = 10V. The device has a gate-source voltage rating of ±20V, a total gate charge (Qg) of 17nC at VGS = 10V, and a power dissipation of 1.9W under standard thermal conditions.
Feature Summary
- Dual N-channel configuration with low on-resistance for high efficiency power management
- Rated for operation in high ambient temperature environments up to +175°C
- 100% unclamped inductive switching tested for robust end applications
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Load Switch
- Adaptor Switch
- Notebook PC
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS38549 Rev. 3 - 2. Confirm that the specific part number matches the required SO-8 packaging and tape & reel quantity. Ensure compliance with RoHS and lead-free requirements as specified in the manufacturer's documentation before finalizing procurement.
Selection Notes
Select this component when a dual N-channel MOSFET with a 60V rating and low RDS(ON) is required. Consider the SO-8 package dimensions and thermal resistance characteristics for PCB layout. Evaluate the +175°C operating temperature capability if the application involves high ambient heat or requires extended thermal margins.
Part Context
This component belongs to the DMTH6016 series of dual N-channel MOSFETs from Diodes Incorporated. It shares similar electrical specifications with other variants in the family but differs in its physical packaging and specific thermal characteristics defined by the SO-8 case style.
Replacement Considerations
An automotive-compliant version is available under the separate part number DMTH6016LSDQ. Verify pinout compatibility and exact electrical limits when considering alternative dual N-channel MOSFETs from other manufacturers.
