DMTH69M8LFVW-13

$0.23

Description：MOSFET N-CH 60V 15.9/45.4A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f8a87ef60765 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 15.9/45.4A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：15.9A (Ta), 45.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.6W (Ta), 29.4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH69M8LFVW-13

Overview

The DMTH69M8LFVW-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) package. It features a drain-source voltage of 60 V and a continuous drain current of 45.4 A at 25°C case temperature. The device exhibits a maximum on-resistance of 9.5 mΩ at VGS = 10 V and 13.3 mΩ at VGS = 4.5 V. Total gate charge is 33.5 nC at VGS = 10 V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Wettable flank design enables improved optical inspection
Qualified to AEC-Q101 automotive standards

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance and is halogen-free. Ensure the application environment supports the specified thermal characteristics and operating temperature limits.

Selection Notes

Select this component when high-efficiency power management requires low on-state resistance combined with superior switching performance. The small form factor thermally efficient package supports higher density end products. Consider the 60V rating and 45.4A current capability for applications requiring robust performance in compact designs.

Part Context

This part belongs to the DMTH69M8LFVW series of 60V N-channel enhancement mode MOSFETs. It utilizes the PowerDI3333-8 (SWP) package type. The product line is designed to minimize on-state resistance while maintaining switching efficiency for high-density electronic systems.

Replacement Considerations

The automotive-compliant variant DMTH69M8LFVWQ is available under a separate datasheet. Verify compatibility if automotive qualification is required for the target application.